Quantum reading capacity: General definition and bounds

Quantum reading refers to the task of reading out classical information stored in a classical memory. In any such protocol, the transmitter and receiver are in the same physical location, and the goal of such a protocol is to use these devices, coupled with a quantum strategy, to read out as much information as possible from a classical memory, such as a CD or DVD. In this context, a memory cell is a collection of quantum channels that can be used to encode a classical message in a memory. The maximum rate at which information can be read out from a given memory encoded with a memory cell is called the quantum reading capacity of the memory cell. As a consequence of the physical setup of quantum reading, the most natural and general definition for quantum reading capacity should allow for an adaptive operation after each call to the channel, and this is how we define quantum reading capacity in this paper. In general, an adaptive strategy can give a significant advantage over a non-adaptive strategy in the context of quantum channel discrimination, and this is relevant for quantum reading, due to its close connection with channel discrimination. In this paper, we provide a general definition of quantum reading capacity, and we establish several upper bounds on the quantum reading capacity of a memory cell. We also introduce an environment-parametrized memory cell, and we deliver second-order and strong converse bounds for its quantum reading capacity. We calculate the quantum reading capacities for some exemplary memory cells, including a thermal memory cell, a qudit erasure memory cell, and a qudit depolarizing memory cell. We finally provide an explicit example to illustrate the advantage of using an adaptive strategy in the context of zero-error quantum reading capacity.